byv 10-60 small signal schottky diode description metal to silicon rectifier diode in glass case featu- ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. november 1994 do 41 (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 60 v i f(av) average forward current* t amb = 25 c 1a i fsm surge non repetitive forward current t amb = 25 c t p = 10ms 20 sinusoidal pulse a t amb = 25 c t p = 300 m s 40 rectangular pulse t stg t j storage and junction temperature range - 65 to + 150 - 65 to + 125 c c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol test conditions value unit r th(j-a) junction-ambient* 110 c/w * on infinite heatsink with 4mm lead length thermal resistance 1/4
symbol test conditions min. typ. max. unit i r * t j = 25 c v r = v rrm 0.5 ma t j = 100 c 10 v f *i f = 1a t j = 25 c 0.7 v i f = 3a 1 static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t j = 25 c v r = 0 150 pf t j = 25 c v r = 5v 40 dynamic characteristics forward current flow in a schottky rectifier is due to majority carrier conduction. so reverse recovery is not affected by stored charge as in conventional pn junction diodes. nevertheless, when the device switches from for- ward biased condition to reverse blocking state, current is required to charge the depletion capaci- tance of the diode. this current depends only of diode capacitance and external circuit impedance. satisfactory circuit be- haviour analysis may be performed assuming that schottky rectifier consists of an ideal diode in paral- lel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). 2/4 * pulse test: t p 300 m s d < 2% . figure 1. forward current versus forward voltage at low level (typical values). figure 2. forward current versus forward voltage at high level (typical values). byv 10-60
figure 3. reverse current versus junction temperature. figure 4. reverse current versus v rrm in per cent. figure 5. capacitance c versus reverse applied voltage v r (typical values). figure 6. surge non repetitive forward current for a rectangular pulse with t 10 ms. 3/4 byv 10-60
figure 7. surge non repetitive forward current versus number of cycles. 4/4 cooling method : by convection and conduction marking: clear, ring at cat hode end. weight: 0.34g package mechanical data do 41 glass note 2 ba b c note 1 note 1 d d o / o / o / e e ref. dimensions notes millimeters inches min. max. min. max. a 4.070 5.200 0.160 0.205 1 - the lead diameter ? d is not controlled over zone e 2 - the minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) b 28 1.102 ? c 2.040 2.710 0.080 0.107 ? d 0.712 0.863 0.028 0.034 e 1.27 0.050 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of t hird parties which may result from its use. no license is granted by implication or ot herwise under any patent or patent rights of sgs-thomson microelectronics. specif ications ment ioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - united kingdom - u.s.a. byv 10-60
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